C6D10065Q-TR

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Wolfspeed

DIODE SIL CARBIDE 650V 39A 4QFN

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Active

Wolfspeed

DIODE SIL CARBIDE 650V 39A 4QFN

Technical Specifications

Parameters and characteristics for this part

Specification	C6D10065Q-TR

Capacitance @ Vr, F	611 pF
Current - Average Rectified (Io)	39 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	4-PowerVQFN
Speed	No Recovery Time
Supplier Device Package	4-QFN (8x8)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Reverse Recovery Time (trr)	Technology	Current - Average Rectified (Io)	Mounting Type
Wolfspeed C6D10065G-TR	20 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.4 V	No Recovery Time	650 V	611 pF	175 ░C	-55 C	TO-263-2	0 ns	SiC (Silicon Carbide) Schottky	36 A	Surface Mount
Wolfspeed C6D10065G	20 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.4 V	No Recovery Time	650 V	611 pF	175 ░C	-55 C	TO-263-2	0 ns	SiC (Silicon Carbide) Schottky	36 A	Surface Mount
Wolfspeed C6D10065Q-TR	50 µA	4-PowerVQFN	1.5 V	No Recovery Time	650 V	611 pF	175 ░C	-55 C	4-QFN (8x8)		SiC (Silicon Carbide) Schottky	39 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 39A Surface Mount 4-QFN (8x8)

Technical documentation and resources