ZXTP25100CFHQTA

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR,

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	ZXTP25100CFHQTA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	180 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	730 mW
Qualification	AEC-Q101
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	310 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

PNP, 100V, 1A, SOT23

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Grade	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc ZXTP25100CFHQTA	100 nA	730 mW	PNP	310 mV	100 V	180 MHz	SC-59 SOT-23-3 TO-236-3	Surface Mount	1 A	Automotive	SOT-23-3	200	AEC-Q101	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.