Technical Specifications
Parameters and characteristics for this part
| Specification | UMZ1NT1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 200 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 hFE |
| Frequency - Transition | 114 MHz, 142 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 250 mW |
| Supplier Device Package | SC70-6, SC-88, SOT-363 |
| Transistor Type | 1 NPN, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 300 mV, 250 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
UMZ1N Series
The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.
Documents
Technical documentation and resources