2SA1955FVBTPL3Z

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 12V 0.4A VESM

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 12V 0.4A VESM

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1955FVBTPL3Z

Current - Collector (Ic) (Max) [Max]	400 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300 hFE
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power - Max [Max]	100 mW
Supplier Device Package	VESM
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	12 V

Part	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Mounting Type	Power - Max [Max]	Operating Temperature	Package / Case	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]
Toshiba Semiconductor and Storage 2SA1955FVBTPL3Z	250 mV	VESM	300 hFE	400 mA	130 MHz	Surface Mount	100 mW	150 °C	SOT-723	PNP	12 V	100 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 12 V 400 mA 130MHz 100 mW Surface Mount VESM

Technical documentation and resources