CP327V-MPSA13-WN

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Central Semiconductor Corp

TRANS NPN DARL 30V 0.5A DIE

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Central Semiconductor Corp

TRANS NPN DARL 30V 0.5A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	CP327V-MPSA13-WN

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10000
Frequency - Transition	125 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	Die
Supplier Device Package	Die
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case
Central Semiconductor Corp CP327V-MPSA13-CT	30 V	1.5 V	100 nA	10000	Surface Mount	125 MHz	500 mA	Die	150 °C	-65 °C	Die
Central Semiconductor Corp CP327V-MPSA13-WN	30 V	1.5 V	100 nA	10000	Surface Mount	125 MHz	500 mA	Die	150 °C	-65 °C	Die

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN - Darlington 30 V 500 mA 125MHz Surface Mount Die

Technical documentation and resources