TPN19008QM,LQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 80V 34A 8TSON

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Toshiba Semiconductor and Storage

MOSFET N-CH 80V 34A 8TSON

Technical Specifications

Parameters and characteristics for this part

Specification	TPN19008QM,LQ

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	57 W, 630 mW
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	8-TSON Advance (3.1x3.1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology
Toshiba Semiconductor and Storage TPN19008QM,LQ	3.5 V	175 °C	16 nC	8-PowerVDFN	1400 pF	N-Channel	80 V	8-TSON Advance (3.1x3.1)	57 W 630 mW	Surface Mount	20 V	19 mOhm	6 V 10 V	34 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 34A (Tc) 630mW (Ta), 57W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Technical documentation and resources