ZXT13P40DE6QTA

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 3A I(C), 40V V(BR)CEO, 1-ELEMENT, PNP, SILICON,

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Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 3A I(C), 40V V(BR)CEO, 1-ELEMENT, PNP, SILICON,

Technical Specifications

Parameters and characteristics for this part

Specification	ZXT13P40DE6QTA

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300 hFE
Frequency - Transition	115 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	1.1 W
Qualification	AEC-Q101
Supplier Device Package	SOT-26
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	240 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PNP, 40V, 3A, SOT26

Part	Current - Collector Cutoff (Max) [Max]	Qualification	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Mounting Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Package / Case
Diodes Inc ZXT13P40DE6QTA	100 nA	AEC-Q101	1.1 W	300 hFE	PNP	40 V	-55 °C	150 °C	Automotive	Surface Mount	3 A	115 MHz	SOT-26	240 mV	SOT-23-6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 40V, 3A, SOT26

Technical documentation and resources