2N4402TF

Obsolete

ON Semiconductor

TRANS PNP 40V 0.6A TO92-3

Search across all available documentation for this part.

Obsolete

ON Semiconductor

TRANS PNP 40V 0.6A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	2N4402TF

Current - Collector (Ic) (Max) [Max]	600 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Transistor Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type
ON Semiconductor 2N4402_S00Z	PNP	600 mA	40 V	50	TO-92-3	-55 °C	150 °C	TO-226-3 TO-92-3	625 mW	750 mV	Through Hole
ON Semiconductor 2N4402TF	PNP	600 mA	40 V	50	TO-92-3	-55 °C	150 °C	TO-226-3 TO-92-3	625 mW	750 mV	Through Hole
ON Semiconductor 2N4402TA	PNP	600 mA	40 V	50	TO-92-3	-55 °C	150 °C	TO-226-3 TO-92-3	625 mW	750 mV	Through Hole
ON Semiconductor 2N4402BU	PNP	600 mA	40 V	50	TO-92-3	-55 °C	150 °C	TO-226-3 TO-92-3	625 mW	750 mV	Through Hole
ON Semiconductor 2N4402TF	PNP	600 mA	40 V	50	TO-92-3	-55 °C	150 °C	TO-226-3 TO-92-3	625 mW	750 mV	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 40 V 600 mA 625 mW Through Hole TO-92-3

Technical documentation and resources