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70T633S10BFG8 - 70T633 - Block Diagram

70T633S10BFG8

Obsolete
Renesas Electronics Corporation

512K X 18, 3.3V/2.5V DUAL-PORT RAM, INTERLEAVED I/O'S

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70T633S10BFG8 - 70T633 - Block Diagram

70T633S10BFG8

Obsolete
Renesas Electronics Corporation

512K X 18, 3.3V/2.5V DUAL-PORT RAM, INTERLEAVED I/O'S

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification70T633S10BFG8
Access Time10 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization512 K
Memory Size9 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case208-LFBGA
Supplier Device Package208-CABGA (15x15)
TechnologySRAM - Dual Port, Asynchronous
Voltage - Supply [Max]2.6 V
Voltage - Supply [Min]2.4 V
Write Cycle Time - Word, Page10 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

70T633 Series

The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.

Documents

Technical documentation and resources