SS2003M-TL-E

Obsolete

ON Semiconductor

SCHOTTKY BARRIER DIODE, 2.0 A, 30 V

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Obsolete

ON Semiconductor

SCHOTTKY BARRIER DIODE, 2.0 A, 30 V

Technical Specifications

Parameters and characteristics for this part

Specification	SS2003M-TL-E

Capacitance @ Vr, F	75 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	1.25 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	6-SMD, Flat Leads
Reverse Recovery Time (trr)	20 ns
Speed	200 mA, 500 ns
Supplier Device Package	6-MCPH
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	400 mV

Schottky Barrier Diode, 2.0 A, 30 V

Part	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Package / Case	Technology	Current - Reverse Leakage @ Vr
ON Semiconductor SS2003M-TL-W	400 mV	6-MCPH	Surface Mount	-55 °C	125 °C	2 A	20 ns	200 mA 500 ns	30 V	75 pF	6-SMD Flat Leads	Schottky	1.25 mA
ON Semiconductor SS2003M-TL-E	400 mV	6-MCPH	Surface Mount	-55 °C	125 °C	2 A	20 ns	200 mA 500 ns	30 V	75 pF	6-SMD Flat Leads	Schottky	1.25 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$