2N5684G

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 80 V, 50 A, 300 MW, TO-204, THROUGH HOLE

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Active

ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 80 V, 50 A, 300 MW, TO-204, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	2N5684G

Current - Collector (Ic) (Max)	50 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15
Frequency - Transition	2 MHz
Mounting Type	Through Hole
Power - Max [Max]	300 W
Supplier Device Package	TO-204
Supplier Device Package	TO-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

50 A, 80 V PNP Bipolar Power Transistor

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max)	Supplier Device Package	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Current - Collector Cutoff (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor 2N5684G	300 W	80 V	2 MHz	50 A	TO-204	TO-3	5 V	PNP	1 mA	Through Hole	15

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The Power 50A 80 V Bipolar NPN Transistor is designed for use in high power amplifier and switching circuit applications.