VS-1KAB20E

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Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1P 200V 1.2A D-38

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Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1P 200V 1.2A D-38

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1KAB20E

Current - Average Rectified (Io)	1.2 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-Square, D-38
Supplier Device Package	D-38
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	200 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Diode Type	Technology	Package / Case	Voltage - Peak Reverse (Max) [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
Vishay General Semiconductor - Diodes Division VS-1KAB20E	-55 °C	150 °C	1.2 A	10 µA	Single Phase	Standard	4-Square D-38	200 V	Through Hole	1.1 V	D-38

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General part information

Bridge Rectifier Single Phase Standard 200 V Through Hole D-38

Technical documentation and resources