SH8M41GZETB

NRND

Rohm Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

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NRND

Rohm Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SH8M41GZETB

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.4 A, 2.6 A
Drain to Source Voltage (Vdss)	80 V
FET Feature	4V Drive, Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	9.2 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Technology	Power - Max [Max]	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Operating Temperature	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Rohm Semiconductor SH8M41GZETB	130 mOhm	Surface Mount	8-SOP	MOSFET (Metal Oxide)	2 W	2.5 V	9.2 nC	N and P-Channel	150 °C	80 V	8-SOIC	3.9 mm	0.154 in	4V Drive Logic Level Gate	600 pF	2.6 A 3.4 A

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General part information

Mosfet Array 80V 3.4A, 2.6A 2W Surface Mount 8-SOP

Technical documentation and resources