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GD55LB01GEY2GY - 8-WDFN Exposed Pad

GD55LB01GEY2GY

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GigaDevice Semiconductor (HK) Limited

IC FLASH 1GBIT SPI/QUAD 8WSON

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GD55LB01GEY2GY - 8-WDFN Exposed Pad

GD55LB01GEY2GY

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 1GBIT SPI/QUAD 8WSON

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGD55LB01GEY2GY
Access Time6 ns
Clock Frequency166 MHz
Memory FormatFLASH
Memory InterfaceQuad I/O, QPI, SPI, DTR
Memory Organization128 M
Memory Size1 Mbit
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]105 °C
Operating Temperature [Min]-40 °C
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (6x8)
TechnologyFLASH - NOR (SLC)
Voltage - Supply [Max]2 V
Voltage - Supply [Min]1.65 V
Write Cycle Time - Word, Page [custom]2 ms
Write Cycle Time - Word, Page [custom]140 µs

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 4800$ 13.40

Description

General part information

GD55LB01 Series

FLASH - NOR (SLC) Memory IC 1Gbit SPI - Quad I/O, QPI, DTR 166 MHz 6 ns 8-WSON (6x8)

Documents

Technical documentation and resources

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