VS-12F80

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 12A DO203AA

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 12A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-12F80

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	12 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-203AA
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.26 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Supplier Device Package	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology	Mounting Type	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-12F80	800 V	DO-203AA DO-4 Stud	12 A	175 ░C	-65 C	Standard Recovery >500ns	200 mA	DO-203AA	DO-4	1.26 V	Standard	Chassis Stud Mount	12 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 4.04

General part information

Diode 800 V 12A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources