UGF8JHC0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A ITO220AC

Search across all available documentation for this part.

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	UGF8JHC0G

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	30 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack
Qualification	AEC-Q101
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V

Part	Current - Reverse Leakage @ Vr	Qualification	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Supplier Device Package	Technology	Grade	Speed	Voltage - DC Reverse (Vr) (Max) [Max]
Taiwan Semiconductor Corporation UGF8JHC0G	30 µA	AEC-Q101	8 A	25 ns	TO-220-2 Full Pack	150 °C	-55 °C	Through Hole	ITO-220AC	Standard	Automotive	200 mA 500 ns	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 8A Through Hole ITO-220AC

Technical documentation and resources

No documents available