VS-1N1190R

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 35A DO203AB

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 35A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1N1190R

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	10 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	190 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Supplier Device Package	DO-203AB
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Speed	Speed	Supplier Device Package	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Package / Case	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division VS-1N1190R	Standard Recovery >500ns	200 mA	DO-5	DO-203AB	10 mA	600 V	190 °C	-65 C	Reverse Polarity Standard	DO-203AB DO-5 Stud	35 A	Chassis Stud Mount	1.7 V
Vishay General Semiconductor - Diodes Division VS-1N1190A	Standard Recovery >500ns	200 mA	DO-5	DO-203AB	2.5 mA	600 V	200 C	-65 C	Standard	DO-203AB DO-5 Stud	40 A	Chassis Stud Mount	1.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 35A Chassis, Stud Mount DO-203AB (DO-5)

Technical documentation and resources