BUJ302A,127

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WeEn Semiconductors Co., Ltd

TRANS NPN 400V 4A TO220AB

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WeEn Semiconductors Co., Ltd

TRANS NPN 400V 4A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	BUJ302A,127

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	250 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Supplier Device Package	TO-220AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Operating Temperature	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]
WeEn Semiconductors Co., Ltd BUJ302AD,118	250 mA	25	DPAK (2 Leads + Tab) SC-63 TO-252-3	400 V	DPAK	150 °C	NPN	Surface Mount	1.5 V	4 A	80 W
WeEn Semiconductors Co., Ltd BUJ302AX,127	250 µA	25	TO-220-3 Full Pack Isolated Tab	400 V	TO-220F	150 °C	NPN	Through Hole	1.5 V	4 A	26 W
WeEn Semiconductors Co., Ltd BUJ302A,127	250 mA	25	TO-220-3	400 V	TO-220AB	150 °C	NPN	Through Hole	1.5 V	4 A	80 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 400 V 4 A 80 W Through Hole TO-220AB

Technical documentation and resources

No documents available