2SD1694-AZ

Active

Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

Deep-Dive with AI

Search across all available documentation for this part.

2SD1694-AZ

Active

Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1694-AZ

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	800
Frequency - Transition	250 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max	1.3 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

2SD1694 Series

Bipolar Power Transistors

Part	Supplier Device Package	Power - Max	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Transistor Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)
Renesas Electronics Corporation 2SD1694-AZ	TO-126	1.3 W	250 MHz	10 µA	400 mV	Through Hole	NPN	3 A	800	TO-126-3 TO-225AA	150 °C	60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	508	$ 0.59

Description

General part information

2SD1694 Series

A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

Documents

Technical documentation and resources

No documents available