CPW2-1200-S010B
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DIODE SILICON CARBIDE 31A DIE
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CPW2-1200-S010B
ObsoleteWolfspeed
DIODE SILICON CARBIDE 31A DIE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CPW2-1200-S010B |
|---|---|
| Current - Average Rectified (Io) | 31 A |
| Current - Reverse Leakage @ Vr | 200 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | Die |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | Die |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
CPW2-1200 Series
Diode 1200 V 31A Surface Mount Die
Documents
Technical documentation and resources
No documents available