US1AHR3G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A DO214AC

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	US1AHR3G

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Qualification	AEC-Q101
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Qualification	Current - Average Rectified (Io)	Speed
Taiwan Semiconductor Corporation US1AHR3G	50 ns	15 pF	5 µA	DO-214AC SMA	1 V	DO-214AC (SMA)	150 °C	-55 °C	Automotive	Standard	50 V	Surface Mount	AEC-Q101	1 A	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 50 V 1A Surface Mount DO-214AC (SMA)

Technical documentation and resources