S4KW8C-4D

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Semtech Corporation

DIODE MODULE 8000V 6A

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Semtech Corporation

DIODE MODULE 8000V 6A

Technical Specifications

Parameters and characteristics for this part

Specification	S4KW8C-4D

Current - Average Rectified (Io) (per Diode)	6 A
Current - Reverse Leakage @ Vr	4 µA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Module
Reverse Recovery Time (trr)	2 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Voltage - DC Reverse (Vr) (Max) [Max]	8000 V
Voltage - Forward (Vf) (Max) @ If	8 V

Part	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)
Semtech Corporation S4KW8C-4D	8 V	Module	150 °C	-55 °C	Standard Recovery >500ns	200 mA	4 µA	Chassis Mount	8000 V	2 µs	6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 8000 V 6A Chassis Mount Module

Technical documentation and resources