C3D06060F

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Wolfspeed

DIODE SIC 600V 11.5A TO220-F2

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Wolfspeed

DIODE SIC 600V 11.5A TO220-F2

Technical Specifications

Parameters and characteristics for this part

Specification	C3D06060F

Capacitance @ Vr, F	294 pF
Current - Average Rectified (Io)	11.5 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220-F2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Capacitance @ Vr, F
Wolfspeed C3D06060G	No Recovery Time	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.7 V	SiC (Silicon Carbide) Schottky	19 A	600 V	0 ns	50 µA	Surface Mount	175 ░C	-55 C	TO-263-2
Wolfspeed C3D06060A	No Recovery Time	TO-220-2	1.8 V	SiC (Silicon Carbide) Schottky	19 A	600 V	0 ns	50 µA	Through Hole	175 ░C	-55 C	TO-220-2	294 pF
Wolfspeed C3D06060G-TR	No Recovery Time	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.7 V	SiC (Silicon Carbide) Schottky	19 A	600 V		50 µA	Surface Mount	175 ░C	-55 C	TO-263-2
Wolfspeed C3D06060F	No Recovery Time	TO-220-2 Full Pack	1.8 V	SiC (Silicon Carbide) Schottky	11.5 A	600 V	0 ns	50 µA	Through Hole	175 ░C	-55 C	TO-220-F2	294 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 11.5A Through Hole TO-220-F2

Technical documentation and resources