BAS116HMFHT116

Active

Rohm Semiconductor

DIODE GEN PURP 80V 215MA SSD3

Search across all available documentation for this part.

Active

Rohm Semiconductor

DIODE GEN PURP 80V 215MA SSD3

Technical Specifications

Parameters and characteristics for this part

Specification	BAS116HMFHT116

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	215 mA
Current - Reverse Leakage @ Vr	5 nA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Qualification	AEC-Q101
Reverse Recovery Time (trr)	3 çs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SSD3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Capacitance @ Vr, F	Grade	Qualification	Current - Average Rectified (Io)	Speed	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Package / Case
Rohm Semiconductor BAS116HMFHT116	Surface Mount	80 V	Standard	4 pF	Automotive	AEC-Q101	215 mA	Standard Recovery >500ns	200 mA	1.25 V	SSD3	150 °C	5 nA	3 çs	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 80 V 215mA Surface Mount SSD3

Technical documentation and resources

No documents available