KBU6M

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 1KV 6A KBU

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 1KV 6A KBU

Technical Specifications

Parameters and characteristics for this part

Specification	KBU6M

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 çA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	KBU, 4-SIP
Supplier Device Package	KBU
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V
Voltage - Peak Reverse (Max) [Max]	1000 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Peak Reverse (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Technology	Mounting Type	Diode Type	Package / Case	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr
GeneSiC Semiconductor KBU6D	-55 °C	150 °C	200 V	1 V	KBU	Standard	Through Hole	Single Phase	4-SIP KBU	6 A	10 µA
GeneSiC Semiconductor KBU6J	-55 °C	150 °C	600 V	1 V	KBU	Standard	Through Hole	Single Phase	4-SIP KBU	6 A	10 µA
GeneSiC Semiconductor KBU6A	-55 °C	150 °C	50 V	1 V	KBU	Standard	Through Hole	Single Phase	4-SIP KBU	6 A	10 µA
GeneSiC Semiconductor KBU6M	-55 °C	150 °C	1000 V	1 V	KBU	Standard	Through Hole	Single Phase	4-SIP KBU	6 A	10 çA
GeneSiC Semiconductor KBU6G	-55 °C	150 °C	400 V	1 V	KBU	Standard	Through Hole	Single Phase	4-SIP KBU	6 A	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole KBU

Technical documentation and resources