BYT79X-600PQ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 15A TO220FP

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 15A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	BYT79X-600PQ

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	60 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220FP
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.38 V

Part	Mounting Type	Current - Average Rectified (Io)	Technology	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Speed	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]
WeEn Semiconductors Co., Ltd BYT79X-600,127	Through Hole	15 A	Standard	150 °C	1.38 V	200 mA 500 ns	TO-220-2 Full Pack Isolated Tab	TO-220FP	600 V	50 µA	60 ns
WeEn Semiconductors Co., Ltd BYT79-500,127	Through Hole	14 A	Standard	150 °C	1.38 V	200 mA 500 ns	TO-220-2	TO-220AC	500 V	50 µA	60 ns
WeEn Semiconductors Co., Ltd BYT79-600,127	Through Hole	15 A	Standard	150 °C	1.38 V	200 mA 500 ns	TO-220-2	TO-220AC	600 V	50 µA	60 ns
WeEn Semiconductors Co., Ltd BYT79X-600PQ	Through Hole	15 A	Standard		1.38 V	200 mA 500 ns	TO-220-2 Full Pack Isolated Tab	TO-220FP	600 V	10 µA	60 ns	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 15A Through Hole TO-220FP

Technical documentation and resources

No documents available