2SD1857TV2P

Obsolete

Rohm Semiconductor

TRANS NPN 120V 2A ATV

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Obsolete

Rohm Semiconductor

TRANS NPN 120V 2A ATV

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1857TV2P

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	82 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	3-SIP
Power - Max [Max]	1 W
Supplier Device Package	ATV
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]
Rohm Semiconductor 2SD1857TV2R	3-SIP	Through Hole	2 V	ATV	150 °C	1 W	180 hFE	120 V	1 µA	NPN	2 A
Rohm Semiconductor 2SD1857ATV2P	3-SIP	Through Hole	2 V	ATV	150 °C	1 W	82 hFE	160 V	1 µA	NPN	1.5 A
Rohm Semiconductor 2SD1857TV2P	3-SIP	Through Hole	2 V	ATV	150 °C	1 W	82 hFE	120 V	1 µA	NPN	2 A
Rohm Semiconductor 2SD1857ATV2Q	3-SIP	Through Hole	2 V	ATV	150 °C	1 W	120 hFE	160 V	1 µA	NPN	1.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 120 V 2 A 80MHz 1 W Through Hole ATV

Technical documentation and resources