
RS1P600BHTB1
ActiveRohm Semiconductor
MOSFET, N-CH, 100V, 60A, HSOP ROHS COMPLIANT: YES
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RS1P600BHTB1
ActiveRohm Semiconductor
MOSFET, N-CH, 100V, 60A, HSOP ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RS1P600BHTB1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A, 18 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 64 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4080 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3 W, 35 W |
| Rds On (Max) @ Id, Vgs | 8.8 mOhm |
| Supplier Device Package | 8-HSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RS1P600BH Series
RS1P600BH is a power MOSFET with low on - resistance, suitable for the primary side switch, motor drives, DC/DC converters.
Documents
Technical documentation and resources