PJT138L_R1_00001

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Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJT138L_R1_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds	15 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	350 mW
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Configuration	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
Panjit International Inc. PJT138L_R1_00001	15 pF	6-TSSOP SC-88 SOT-363	2 N-Channel (Dual)	1.5 V	MOSFET (Metal Oxide)	60 V	-55 °C	150 °C	350 mW	SOT-363	Surface Mount	0.7 nC	200 mA

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General part information

Mosfet Array 60V 200mA (Ta) 350mW (Ta) Surface Mount SOT-363

Technical documentation and resources