ZXTN25012EZTA

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Diodes Inc

POWER BIPOLAR TRANSISTOR, 6.5A I(C), 12V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN, SOT-89, 3 PIN

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 6.5A I(C), 12V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN, SOT-89, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	ZXTN25012EZTA

Current - Collector (Ic) (Max) [Max]	6.5 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	500
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power - Max [Max]	2.4 W
Supplier Device Package	SOT-89-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	270 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	12 V

NPN, 12V, 6.5A, SOT89

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Transistor Type	Power - Max [Max]
Diodes Inc ZXTN25012EZTA	-55 °C	150 °C	TO-243AA	6.5 A	500	50 nA	Surface Mount	12 V	270 mV	SOT-89-3	NPN	2.4 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 12V, 6.5A, SOT89

Technical documentation and resources