MBRH20030R

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GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V 200A D-67

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GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V 200A D-67

Technical Specifications

Parameters and characteristics for this part

Specification	MBRH20030R

Current - Average Rectified (Io)	200 A
Current - Reverse Leakage @ Vr	5 mA
Mounting Type	Chassis Mount
Package / Case	D-67
Speed	200 mA, 500 ns
Supplier Device Package	D-67
Technology	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	650 mV

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology	Mounting Type	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Speed
GeneSiC Semiconductor MBRH20030R	5 mA	650 mV	Reverse Polarity Schottky	Chassis Mount	D-67	D-67	30 V	200 A	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	108	$ 58.42

General part information

Diode 30 V 200A Chassis Mount D-67

Technical documentation and resources