VIT3080S-M3/4W

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Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 80V 30A TO262AA

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Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 80V 30A TO262AA

Technical Specifications

Parameters and characteristics for this part

Specification	VIT3080S-M3/4W

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Speed	200 mA, 500 ns
Supplier Device Package	TO-262AA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Speed	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Diode Configuration	Grade	Current - Average Rectified (Io) (per Diode)	Qualification
Vishay General Semiconductor - Diodes Division VIT3080S-M3/4W	80 V	Through Hole	30 A	200 mA 500 ns	1 mA	Schottky	TO-262AA	I2PAK TO-262-3 Long Leads TO-262AA	950 mV	150 °C	-55 °C
Vishay General Semiconductor - Diodes Division VIT3080CHM3/4W	80 V	Through Hole		200 mA 500 ns	700 µA	Schottky	TO-262AA	I2PAK TO-262-3 Long Leads TO-262AA	820 mV	150 °C	-55 °C	1 Pair Common Cathode	Automotive	15 A	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	8000	$ 0.53

General part information

Diode 80 V 30A Through Hole TO-262AA

Technical documentation and resources