VS-31DQ09G

Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 90V 3.3A C-16

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Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 90V 3.3A C-16

Technical Specifications

Parameters and characteristics for this part

Specification	VS-31DQ09G

Capacitance @ Vr, F	110 pF
Current - Average Rectified (Io)	3.3 A
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-201AD, Axial
Speed	200 mA, 500 ns
Supplier Device Package	C-16
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If [Max]	850 mV

Part	Mounting Type	Current - Average Rectified (Io)	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package	Capacitance @ Vr, F
Vishay General Semiconductor - Diodes Division VS-31DQ09TR	Through Hole	3.3 A	Schottky	850 mV	200 mA 500 ns	150 °C	-40 °C	DO-201AD Axial	C-16
Vishay General Semiconductor - Diodes Division VS-31DQ09G	Through Hole	3.3 A	Schottky	850 mV	200 mA 500 ns	150 °C	-40 °C	DO-201AD Axial	C-16	110 pF
Vishay General Semiconductor - Diodes Division VS-31DQ09	Through Hole	3.3 A	Schottky	850 mV	200 mA 500 ns	150 °C	-40 °C	DO-201AD Axial	C-16
Vishay General Semiconductor - Diodes Division VS-31DQ09GTR	Through Hole	3.3 A	Schottky	850 mV	200 mA 500 ns	150 °C	-40 °C	DO-201AD Axial	C-16	110 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Diode 90 V 3.3A Through Hole C-16

Technical documentation and resources