PJE8472B_R1_00001

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Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJE8472B_R1_00001

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.82 nC
Input Capacitance (Ciss) (Max) @ Vds	34 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-523
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	SOT-523
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Vgs (Max)	Supplier Device Package
Panjit International Inc. PJE8472B_R1_00001	4.5 V 10 V	60 V	200 mA	3 Ohm	0.82 nC	34 pF	2.5 V	Surface Mount	N-Channel	SOT-523	MOSFET (Metal Oxide)	-55 °C	150 °C	300 mW	30 V	SOT-523

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General part information

N-Channel 60 V 200mA (Ta) 300mW (Ta) Surface Mount SOT-523

Technical documentation and resources