
1N4737A-TAP
ActiveVishay General Semiconductor - Diodes Division
DIODE ZENER SINGLE 7.5V 5% 1300MW 2-PIN DO-41 AMMO
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

1N4737A-TAP
ActiveVishay General Semiconductor - Diodes Division
DIODE ZENER SINGLE 7.5V 5% 1300MW 2-PIN DO-41 AMMO
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N4737A-TAP |
|---|---|
| Current - Reverse Leakage @ Vr | 10 µA |
| Grade | Automotive |
| Impedance (Max) (Zzt) [Max] | 4 Ohms |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | DO-204AL, DO-41, Axial |
| Power - Max | 1.3 W |
| Qualification | AEC-Q101 |
| Supplier Device Package | DO-204AL (DO-41) |
| Tolerance | 5 % |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V |
| Voltage - Zener (Nom) (Vz) | 7.51 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
1N4737 Series
Zener Diode 7.51 V 1.3 W ±5% Through Hole DO-204AL (DO-41)
Documents
Technical documentation and resources