DSEI20-12A

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IXYS

DIODE GEN PURP 1.2KV 17A TO220AC

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IXYS

DIODE GEN PURP 1.2KV 17A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	DSEI20-12A

Current - Average Rectified (Io)	17 A
Current - Reverse Leakage @ Vr	750 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	60 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.15 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Technology	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]
IXYS DSEI20-12A	150 °C	-40 °C	Through Hole	200 mA 500 ns	17 A	TO-220AC	TO-220-2	750 µA	60 ns	Standard	2.15 V	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 17A Through Hole TO-220AC

Technical documentation and resources