
2SB1561T100Q
Rohm Semiconductor
TRANS GP BJT PNP 60V 2A 4-PIN(3+TAB) MPT T/R
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2SB1561T100Q
Rohm Semiconductor
TRANS GP BJT PNP 60V 2A 4-PIN(3+TAB) MPT T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SB1561T100Q |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 hFE |
| Frequency - Transition | 200 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-243AA |
| Power - Max [Max] | 2 W |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 350 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
2SB1561 Series
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.· Suitable for Middle Power Driver· Low VCE(sat)· Small Surface Mount Package· Pb Free/RoHS Compliant
Documents
Technical documentation and resources
No documents available