F1T5GH

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A TS-1

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A TS-1

Technical Specifications

Parameters and characteristics for this part

Specification	F1T5GH

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	T-18, Axial
Qualification	AEC-Q101
Reverse Recovery Time (trr)	250 ns
Speed	200 mA, 500 ns
Supplier Device Package	TS-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Speed	Technology	Mounting Type	Qualification	Package / Case	Reverse Recovery Time (trr)	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Supplier Device Package	Capacitance @ Vr, F
Taiwan Semiconductor Corporation F1T5GH	150 °C	-55 °C	5 µA	200 mA 500 ns	Standard	Through Hole	AEC-Q101	T-18 Axial	250 ns	Automotive	600 V	1.3 V	1 A	TS-1	15 pF

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General part information

Diode 600 V 1A Through Hole TS-1

Technical documentation and resources