BYC8B-600PJ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 8A D2PAK

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 8A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BYC8B-600PJ

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	18 ns
Speed	200 mA, 500 ns
Supplier Device Package	D2PAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	3.4 V

Part	Current - Reverse Leakage @ Vr	Package / Case	Technology	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]
WeEn Semiconductors Co., Ltd BYC8-600,127	150 µA	TO-220-2	Standard	200 mA 500 ns	600 V	Through Hole	150 °C	8 A	52 ns	TO-220AC
WeEn Semiconductors Co., Ltd BYC8X-600,127	150 µA	TO-220-2 Full Pack Isolated Tab	Standard	200 mA 500 ns	600 V	Through Hole	150 °C	8 A	52 ns	TO-220FP
WeEn Semiconductors Co., Ltd BYC8D-600,127	40 µA	TO-220-2	Standard	200 mA 500 ns	600 V	Through Hole	150 °C	8 A	20 ns	TO-220AC
WeEn Semiconductors Co., Ltd BYC8X-600P,127	20 µA	TO-220-2 Full Pack Isolated Tab	Standard	200 mA 500 ns	600 V	Through Hole		8 A	18 ns	TO-220FP	1.9 V	175 °C
WeEn Semiconductors Co., Ltd BYC8B-600PJ	20 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	200 mA 500 ns	600 V	Surface Mount		8 A	18 ns	D2PAK	3.4 V	175 °C
WeEn Semiconductors Co., Ltd BYC8-600P,127	20 µA	TO-220-2	Standard	200 mA 500 ns	600 V	Through Hole		8 A	18 ns	TO-220AC	1.9 V	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 8A Surface Mount D2PAK

Technical documentation and resources

No documents available