TK1R5R04PB,LXGQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 160A D2PAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 160A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK1R5R04PB,LXGQ

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	103 nC
Input Capacitance (Ciss) (Max) @ Vds	5500 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	205 W
Rds On (Max) @ Id, Vgs	1.5 mOhm
Supplier Device Package	D2PAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature	FET Type	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TK1R5R04PB,LXGQ	6 V 10 V	160 A	5500 pF	Surface Mount	1.5 mOhm	20 V	175 °C	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK+	3 V	MOSFET (Metal Oxide)	205 W	103 nC	40 V

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General part information

N-Channel 40 V 160A (Ta) 205W (Tc) Surface Mount D2PAK+

Technical documentation and resources