RUF015N02TL

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Rohm Semiconductor

TRANS MOSFET N-CH 20V 1.5A 3-PIN TUMT T/R

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DocumentsTechnical Data Sheet EN TUMT3 Part Marking +31

RUF015N02TL

Active

Rohm Semiconductor

TRANS MOSFET N-CH 20V 1.5A 3-PIN TUMT T/R

Deep-Dive with AI

DocumentsTechnical Data Sheet EN TUMT3 Part Marking +31

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RUF015N02TL

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [custom]	4.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	2.5 nC
Input Capacitance (Ciss) (Max) @ Vds	110 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TUMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

RUF015N02 Series

1.8V Drive Nch MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [custom]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	FET Type
Rohm Semiconductor RUF015N02TL	110 pF	180 mOhm	4.5 V	2.5 nC	10 V	150 °C	20 V	Surface Mount	TUMT3	1.5 A	1.8 V 4.5 V	MOSFET (Metal Oxide)	1 V	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.55
		10	$ 0.40
		100	$ 0.27
		500	$ 0.23
		1000	$ 0.19
	Digi-Reel®	1	$ 0.55
		10	$ 0.40
		100	$ 0.27
		500	$ 0.23
		1000	$ 0.19
	Tape & Reel (TR)	3000	$ 0.14
		6000	$ 0.14
		9000	$ 0.14
		30000	$ 0.14
Newark	Each	1	$ 0.62
		10	$ 0.39
		100	$ 0.27
		500	$ 0.21
		1000	$ 0.19
		2500	$ 0.16
		10000	$ 0.15

Description

General part information

RUF015N02 Series

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.