TN6726A

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ON Semiconductor

TRANS PNP 30V 1.5A TO226-3

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ON Semiconductor

TRANS PNP 30V 1.5A TO226-3

Technical Specifications

Parameters and characteristics for this part

Specification	TN6726A

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Transistor Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case
ON Semiconductor TN6726A	30 V	500 mV	TO-226-3	PNP	100 nA	1 W	50	1.5 A	-55 °C	150 °C	Through Hole	TO-226-3 TO-92-3
ON Semiconductor TN6726A	30 V	500 mV	TO-92-3	PNP	100 nA	1 W	60	1.5 A	-55 °C	150 °C	Through Hole	TO-226-3 TO-92-3 Long Body

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 30 V 1.5 A 1 W Through Hole TO-226-3

Technical documentation and resources