2N5087RLRA

Obsolete

ON Semiconductor

TRANS PNP 50V 0.05A TO92

Search across all available documentation for this part.

Obsolete

ON Semiconductor

TRANS PNP 50V 0.05A TO92

Technical Specifications

Parameters and characteristics for this part

Specification	2N5087RLRA

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	40 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Transistor Type	Package / Case	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package
ON Semiconductor 2N5087_J61Z	TO-92-3	-55 °C	150 °C	50 V	300 mV	100 mA	PNP	TO-226-3 TO-92-3	40 MHz	250	Through Hole	625 mW	50 nA
ON Semiconductor 2N5087RLRA	TO-92	-55 °C	150 °C	50 V	300 mV	50 mA	PNP	Formed Leads TO-226-3 TO-92-3 Long Body	40 MHz	250	Through Hole	625 mW	50 nA	TO-226
ON Semiconductor 2N5087_S00Z	TO-92-3	-55 °C	150 °C	50 V	300 mV	100 mA	PNP	TO-226-3 TO-92-3	40 MHz	250	Through Hole	625 mW	50 nA
ON Semiconductor 2N5087TA	TO-92-3	-55 °C	150 °C	50 V	300 mV	100 mA	PNP	TO-226-3 TO-92-3	40 MHz	250	Through Hole	625 mW	50 nA
ON Semiconductor 2N5087G	TO-92	-55 °C	150 °C	50 V	300 mV	50 mA	PNP	TO-226-3 TO-92-3 Long Body	40 MHz	250	Through Hole	625 mW	50 nA	TO-226

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 50 V 50 mA 40MHz 625 mW Through Hole TO-92 (TO-226)

Technical documentation and resources