RX3L07BGNC16

NRND

Rohm Semiconductor

MOSFET, N-CH, 60V, 70A, TO-220AB ROHS COMPLIANT: YES

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NRND

Rohm Semiconductor

MOSFET, N-CH, 60V, 70A, TO-220AB ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	RX3L07BGNC16

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	96 W
Rds On (Max) @ Id, Vgs	7.2 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Operating Temperature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Rohm Semiconductor RX3L07BGNC16	60 V	70 A	N-Channel	20 V	4.5 V 10 V	Through Hole	MOSFET (Metal Oxide)	150 °C	96 W	7.2 mOhm	TO-220-3	2.5 V	TO-220AB	2600 pF	55 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 70A (Tc) 96W (Tc) Through Hole TO-220AB

Technical documentation and resources