VS-30EPH06HN3

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Vishay General Semiconductor - Diodes Division

DIODE GP 600V 30A TO247AC

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Vishay General Semiconductor - Diodes Division

DIODE GP 600V 30A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-30EPH06HN3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	31 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC Modified
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.6 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Reverse Recovery Time (trr)	Speed	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VS-30EPH06HN3	600 V	TO-247-2	31 ns	200 mA 500 ns	TO-247AC Modified	Standard	2.6 V	50 µA	175 ░C	-65 C	Through Hole	30 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 3.82

General part information

Diode 600 V 30A Through Hole TO-247AC Modified

Technical documentation and resources