GD60MPS17H

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GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 122A TO247

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GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 122A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	GD60MPS17H

Capacitance @ Vr, F	4577 pF
Current - Average Rectified (Io)	122 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Speed	200 mA, 500 ns
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Mounting Type	Speed	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Average Rectified (Io)
GeneSiC Semiconductor GD60MPS17H	1.8 V	40 µA	TO-247-2	TO-247-2	Through Hole	200 mA 500 ns	4577 pF	1700 V	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	122 A

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General part information

Diode 1700 V 122A Through Hole TO-247-2

Technical documentation and resources