1N3889

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GeneSiC Semiconductor

DIODE GEN PURP 50V 12A DO4

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GeneSiC Semiconductor

DIODE GEN PURP 50V 12A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N3889

Current - Average Rectified (Io)	12 A
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Technology	Mounting Type	Package / Case	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)
GeneSiC Semiconductor 1N3889	12 A	1.4 V	DO-4	Standard	Chassis Stud Mount	DO-203AA DO-4 Stud	200 mA 500 ns	50 V	150 °C	-65 C	200 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1000	$ 5.64

General part information

Diode 50 V 12A Chassis, Stud Mount DO-4

Technical documentation and resources