2SD2167T100P

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Rohm Semiconductor

TRANS NPN 31V 2A MPT3

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Rohm Semiconductor

TRANS NPN 31V 2A MPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SD2167T100P

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	82
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	31 V

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Frequency - Transition	Operating Temperature	Package / Case	Mounting Type	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Rohm Semiconductor 2SD2167T100P	31 V	82	2 W	100 MHz	150 °C	TO-243AA	Surface Mount	NPN	1 V	1 µA	2 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Bipolar (BJT) Transistor NPN 31 V 2 A 100MHz 2 W Surface Mount MPT3

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