MBR120150CTR

Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 150V 60A 2TOWER

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Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 150V 60A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR120150CTR

Current - Average Rectified (Io) (per Diode)	60 A
Current - Reverse Leakage @ Vr	1 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If	880 mV

Part	Package / Case	Diode Configuration	Supplier Device Package	Mounting Type	Technology	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor MBR120150CTR	Twin Tower	1 Pair Common Anode	Twin Tower	Chassis Mount	Schottky	200 mA 500 ns	150 °C	-55 °C	60 A	1 mA	880 mV
GeneSiC Semiconductor MBR120150CT	Twin Tower	1 Pair Common Cathode	Twin Tower	Chassis Mount	Schottky	200 mA 500 ns	150 °C	-55 °C	60 A	1 mA	880 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Anode 150 V 60A Chassis Mount Twin Tower

Technical documentation and resources