PJT7002H_R1_00001

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Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJT7002H_R1_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.3 nC
Input Capacitance (Ciss) (Max) @ Vds	22 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	350 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Configuration
Panjit International Inc. PJT7002H_R1_00001	Surface Mount	6-TSSOP SC-88 SOT-363	5 Ohm	1.3 nC	250 mA	3 V	22 pF	350 mW	MOSFET (Metal Oxide)	60 V	-55 °C	150 °C	SOT-363	2 N-Channel (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 250mA (Ta) 350mW (Ta) Surface Mount SOT-363

Technical documentation and resources